PackageCircuitVBRDSS (V)RDS(on) 1.8V (mOhms)RDS(on) 2.5V (mOhms)RDS(on) Max 2.7V (mOhms)RDS(on) Max 4.5V (mOhms)RDS(on) Max 10V (mOhms)ID @ TC = 25C (A)ID @ TC = 100C (A)ID @ TA = 25C (A)ID @ TA = 70C (A)Qg Typ (nC)Qgd Typ (nC)Rth(JC) (K/W)Power Dissipation @ TC = 25C (W)Power Dissipation @ TA = 25C (W)PbF1K Budgetary Pricing (USD)IRF7406HEXFET Power MOSFETs Discrete P-ChannelSO-8Discrete-30 70.045.0 -5.8-3.739.314.050 (JA) 2.50
IRF7406 |
RFQ for IRF7406 |
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| Technical/Catalog Information | IRF7406 |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 5.8A |
| Rds On (Max) @ Id, Vgs | 45 mOhm @ 2.8A, 10V |
| Input Capacitance (Ciss) @ Vds | 1100pF @ 25V |
| Power - Max | 2.5W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 59nC @ 10V |
| Package / Case | 8-SOIC (3.9mm Width) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IRF7406 IRF7406 |
| Product | Manufacturers | Pack | D/C | |||||||||||||||||||
| IRF7406 | - | - | - |